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Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V
| Model Number | IRFR9214PBF |
|---|---|
| Minimum Order Quantity | 1 pcs |
| Price | Negotiable |
| Packaging Details | boxes |
| Payment Terms | L/C, T/T |
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xProduct Details
| Manufacturer | Vishay | Product Category | MOSFET |
|---|---|---|---|
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 | Transistor Polarity | P-Channel |
| Id - Continuous Drain Current | 2.7 A | Rds On - Drain-Source Resistance | 3 Ohms |
| Highlight | IRFR9214PBF Aviation Parts,250 V Aviation Parts,250 V IRFR9214PBF MOSFET |
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Product Description
Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V
Descriptions of Aviation Parts:
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
Features of Aviation Parts:
- Advanced process technology
- Fully avalanche rated
- Surface-mount (IRFR9214, SiHFR9214)
- Straight lead (IRFU9214, SiHFU9214)
- P-channel
- Fast switching
Specifications of Aviation Parts:
| Product Attribute | Attribute Value |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Id - Continuous Drain Current: | 2.7 A |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 14 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 50 W |
| Channel Mode: | Enhancement |
| Series: | IRFR/U |
| Packaging: | Tube |
| Brand: | Vishay Semiconductors |
| Configuration: | Single |
| Height: | 2.38 mm |
| Length: | 6.73 mm |
| Product Type: | MOSFET |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Width: | 6.22 mm |
| Unit Weight: | 0.011640 oz |
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